smd type mosfet 1 www.kexin.com.cn 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source mos field effect transistor 2SK3481 features super low on-state resistance: r ds(on)1 =50m max. (v gs =10v,i d = 15a) r ds(on)2 =58m max. (v gs =4.5v,i d =15a) low c iss: c iss = 2300 pf typ. built-in gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v i d 30 a i dp * 60 a power dissipation t c =25 56 t a =25 1.5 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =100v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gat cutoff voltage v gs(off) v ds =10v,i d =1ma 1.5 2.0 2.5 v forward transfer admittance y fs v ds =10v,i d =15a 9 18 s r ds(on)1 v gs =10v,i d =15a 40 50 m r ds(on)2 v gs =4.5v,i d =15a 44 58 m input capacitance c iss 2300 pf output capacitance c oss 230 pf reverse transfer capacitance c rss 120 pf turn-on delay time t on 13 ns rise time t r 10 ns turn-off delay time t off 53 ns fall time tf 5.0 ns total gate charge q g 48 nc gate to source charge q gs 7.0 nc gate to drain charge q gd 12 nc v ds =10v,v gs =0,f=1mhz i d =15a,v gs(on) =10v,r g =0 ,v dd =50v i d =30a, v dd =80v, v gs =10v draintosourceon-stateresistance
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